MoS2 Phase-junction-based Schottky Diodes for RF Electronics

MoS ₂ could enable new kinds of electronic systems thanks to its ultrathin nature and unique transport properties. However, for many applications such as microwave detectors and rectennas, an ultrafast Schottky diode operating in the gigahertz, especially in the cellular band, is important but has not been realized in MoS ₂ electronics. The lack of such a technology prevents the development of high frequency RF energy harvesting based on MoS ₂ . Here we propose a unique MoS ₂ semiconducting-metallic phase heterojunction, which enables a lateral MoS ₂ Schottky diode with a cutoff frequency about 4 GHz. Due to a novel lateral architecture and phase engineering, our MoS ₂ Schottky diode exhibits significantly reduced parasitic capacitance and series resistance. Moreover, our proposed MoS ₂ diode can be fabricated in a facile self-aligned process. Based on this technology, we demonstrate a single-stage MoS ₂ -based RF rectifying circuit on a printed circuit board (PCB), which successfully realizes wireless energy harvesting in the cellular band (1.9 GHz).