On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In 0.74 Ga 0.26 As quantum wells and δ-doped In 0.53 Al 0.20 Ga 0.27 As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p -type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10 12 cm –2 results in the suppression of nonradiative recombination.