Metal-Catalyst-Free Growth of Patterned Graphene on SiO 2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

Yibo Dong
Yibo Dong
Chuantong Cheng
Chuantong Cheng
Yongdong Zhao
Yongdong Zhao
Guanzhong Pan
Guanzhong Pan

ACS applied materials & interfaces, Volume 11, Issue 15, 2019, Pages 14427-14436.

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Abstract:

A metal-catalyst-free method for direct growth of patterned graphene on insulating substrate is reported in this paper. Parylene N is used as carbon source. The surface molecule layer of Parylene N is cross-linked by argon plasma bombardment. Under high temperature annealing, the cross-linking layer of Parylene N will be graphitized into ...More

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