Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
PloS one, Volume 14, Issue 4, 2019.
In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a function of electron energy for confined and in...More
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