Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures

Ahmed Mohamed
Ahmed Mohamed
Kihoon Park
Kihoon Park

PloS one, Volume 14, Issue 4, 2019.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1371/journal.pone.0214971
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Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a function of electron energy for confined and in...More

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