Effect of energy density on the target on SnO 2 :Sb film properties when using a high-speed particle separator

SnO 2 :Sb thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing under different deposition conditions in the range of the energy densities on the target from 3.4 to 6.8 J/cm 2 . Their optical, structural, and electrical properties are studied. It is found that the energy density on the target affects the SnO 2 :Sb film conductivity and transmittance. The optimum conditions of film growth by the droplet-free pulsed laser deposition method are determined. A resistivity minimum of 1.2 × 10 –3 Ω cm is observed at an energy density on the target of 4.6 J/cm 2 , a substrate temperature of 300°C, and an oxygen pressure of 20 mTorr in the vacuum chamber during deposition.