Quasi-two-dimensional β-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Qingzhou Liu
Qingzhou Liu
Chenfei Shen
Chenfei Shen
Chi Xu
Chi Xu
Mingrui Chen
Mingrui Chen
Hongyu Fu
Hongyu Fu

Nano Research, pp. 143-148, 2018.

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Abstract:

Quasi-two-dimensional (2D) β-Ga2O3 is a rediscovered metal-oxide semiconductor with an ultra-wide bandgap of 4.6–4.9 eV. It has been reported to be a promising material for next-generation power and radio frequency electronics. Field effect transistors (FETs) that can switch at high voltage are key components in power and radio frequency ...More

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