GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Kazuki Nomoto,Zongyang Hu, Bowen Song,Ming Zhu,Meng Qi,Rusen Yan,Vladimir Protasenko,E. A. Imhoff, Jenny Kuo,Naoki Kaneda,Tomoyoshi Mishima, Tomohiko Nakamura,Debdeep Jena,Huili Grace Xing

2015 IEEE International Electron Devices Meeting (IEDM)（2015）

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摘要

We report GaN p-n diodes on free-standing GaN substrates: a record high Baliga's figure-of-merit (V<;sub>B<;/sub><;sup>2<;/sup>/ Ron) of 12.8 GW/cm<;sup>2<;/sup> is achieved with a 32 μm drift layer and a diode diameter of 107 μm exhibiting a BV > 3.4 kV and a R<;sub>on<;/sub> <; 1 mΩ-cm<;sup>2<;/sup>. The leakage current density is low: 10<;sup>-3<;/sup> - 10<;sup>-4<;/sup> A/cm<;sup>2<;/sup> at 3 kV. A record low ideality factor of 1.1-1.3 is signature of high GaN quality. These are among the best-reported GaN p-n diodes.

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关键词

gallium nitride-on-gallium nitride p-n power diodes,free-standing gallium nitride substrates,Baliga figure-of-merit,leakage current density,ideality factor,gallium nitride quality,voltage 3.48 kV,voltage 3 kV,GaN,GaN

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