Fully-integrated CMOS-compatible Q-switched laser at 1.9μm using thulium-doped Al 2 O 3

conference on lasers and electro optics(2017)

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摘要
A fully-integrated Q-switched laser is demonstrated at 1.9μm using thulium-doped aluminum oxide waveguides, with the potential for achieving an on-chip passively mode-locked laser. All components of the laser are fabricated in a CMOS-compatible silicon photonics process.
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关键词
CMOS-compatible silicon photonics process,thulium-doped aluminum oxide waveguides,fully-integrated CMOS-compatible Q-switched laser,on-chip passively mode-locked laser,wavelength 1.9 mum,Al2O3:Tm
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