Improvement in the Performance of Sol–Gel Processed In 2 O 3 Thin-Film Transistor Depending on Sb Dopant Concentration

Solution-processed Sb-doped In2O3 thin-film transistors (TFTs) have been fabricated. To improve the electrical performance, In2O3 was doped with Sb, which exhibits a higher standard electrical potential than In and acts as a booster to create more oxygen vacancies and extra electrons. We observed that as the doping concentration increases, the oxygen deficiency of In2O3 and the concentration of Sb...