Ultra-low (1.2×10 −9 Ωcm 2 ) p-Si 0.55 Ge 0.45 contact resistivity (ρ c ) using nanosecond laser anneal for 7nm nodes and beyond

Chih-Yang Chang
Chih-Yang Chang
Kelly E Hollar
Kelly E Hollar
Hongwen Zhou
Hongwen Zhou
Yi-Chiau Huang
Yi-Chiau Huang
Hua Chung
Hua Chung

international workshop on junction technology, pp. 23-26, 2017.

Cited by: 1|Views16

Abstract:

The recent FinFET scaling for 10–7nm node has resulted in significantly reduced contact areas for source/drain regions, leading to high contact resistance (Rc) [1-3]. Hence, it has become extremely critical to reduce the contact resistivity (ρ c ) to −9 Ω.cm 2 . ρ c can be reduced by increasing the dopant concentration at the metal/semi...More

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