Investigations of Asymmetric Spacer Tunnel Layer Diodes for High-Frequency Applications

K. N. Zainul Ariffin,Y. Wang, M. R. R. Abdullah,S. G. Muttlak,O. S. Abdulwahid,J. Sexton,Ka Wa Ian,M. J. Kelly,M. Missous

IEEE Transactions on Electron Devices（2018）

引用 17|浏览9

暂无评分

摘要

A complete description of physical models for fabricated asymmetric spacer tunnel layer (ASPAT) diodes is reported in this paper. A novel In0.53Ga0.47As/AlAs design is presented and compared to the conventional GaAs/AlAs material system. For both material schemes, physical models were developed based on experimental measurements. Simulated dc characteristics of the devices are given for both plana...

查看译文

关键词

Tunneling,Effective mass,Schottky diodes,Detectors,Photonic band gap,Semiconductor process modeling

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要