Effect Of 1.5 Mev Electron Irradiation On Beta-Ga2o3 Carrier Lifetime And Diffusion Length

The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped beta-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 x 10(16) cm(-2). The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation. Published by AIP Publishing.