Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
Solid-State Electronics(2018)
摘要
•Presenting a new multi-scale simulations approach combining ab-initio material calculations with sheet resistance simulations.•Revealing unexpected change of the material properties of semiconductor at the interface with a metal at nanoscale.•Following closely experimental work of a leading semiconductor company.•Giving exceptionally good agreement with experimental observation of contact sheet resistance.
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关键词
Ab-initio,Band gap narrowing,III–V semiconductors,1D Poisson-Schrödinger,Schottky barrier height,Density functional theory (DFT)
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