On Image Charge Induced Barrier Lowering in Graphene–Semiconductor Contacts
IEEE Transactions on Nanotechnology(2018)
摘要
Graphene has been extensively studied as highly flexible and optically transparent contacts in semiconductor devices, such as photodetectors, solar cells, and light emitting transistors. A Schottky barrier forms at the interface between graphene and semiconductor, whose height has an exponential impact on the current. In this work, image-charge-induced barrier lowering (BL) in graphene-semiconduct...
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关键词
Graphene,Metals,Doping,Dielectric constant,Electric fields,Electric potential,Schottky barriers
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