0.5–4.4 Gbit/s PAM4/NRZ dual-mode transceiver with 0.6 V near-ground NMOS driver for low-power memory interface

Electronics Letters(2018)

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摘要
An efficient dual-mode input and output transceiver scheme is proposed. The transceiver can achieve the data speed from 0.5 up to 4.4 Gbit/s with 0.6 V supply voltage and can support the near-ground mode for low-power memory interface application. The transceiver can transmit both PAM4/NRZ signals flexibly depending on the channel loss conditions. The prototype bi-directional two-channel transceiv...
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关键词
CMOS memory circuits,driver circuits,low-power electronics,transceivers
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