( )Beta-Ga2o3 Defect Study By Steady-State Capacitance Spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS(2018)
摘要
We use steady-state capacitance measurement originally intended for capacitance-voltage experiment to observe and characterize the electrical properties of deep defects in beta-Ga2O3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 x 10(16)cm(-3) and a capture cross-section of 1.1 x 10(-14)cm(2), making it potentially influential in determining the performance of beta-Ga2O3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in beta-Ga2O3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes. (C) 2018 The Japan Society of Applied Physics
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