Fast Recovery Performance of β-Ga2 O3 Trench MOS Schottky Barrier Diodes
device research conference（2018）
摘要
Gallium oxide (Ga
2
O
3
) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of ~ 8 MV/cm and Baliga's FOM of ~ 3400. Among several polytypes of Ga
2
O
3
, β-Ga
2
O
3
is the most viable option that can provide cost-effective and high-quality wafers with an edge-defined film-fed growth (EFG) method [1]. Several groups have reported excellent electric characteristics of vertical-type power devices using the β-Ga
2
O
3
wafers [2]-[4]. We also demonstrated Schottky barrier diodes (SBDs) [5], trench metal-oxide-semiconductor SBDs (MOSSBDs) [6], junction barrier Schottky diodes [7], and trench metal-oxide-semiconductor field-effect transistors (MOSFETs) [8].
更多查看译文
关键词
high breakdown field,high-quality wafers,edge-defined film-fed growth method,vertical-type power devices,fast recovery performance,gallium oxide,next-generation semiconductor material,β-Ga2O3 trench MOS Schottky barrier diodes,trench metal-oxide-semiconductor field-effect transistors,junction barrier Schottky diodes,electron volt energy 4.5 eV to 4.9 eV,Ga2O3
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要