N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

APPLIED PHYSICS EXPRESS, pp. 1010022018.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.7567/APEX.11.101002
Other Links: academic.microsoft.com|arxiv.org

Abstract:

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high b...More

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