N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications
APPLIED PHYSICS EXPRESS, pp. 1010022018.
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high b...More
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