RF operation in graded Al x Ga1−x N (x = 0.65 to 0.82) channel transistors
Electronics Letters(2018)
摘要
The first report is presented on the RF operation of AlGaN channel transistor with Al-composition above 80%. The reported device is a polarisation-graded field effect transistor (PolFET) featuring an ultra-wide bandgap (UWBG) AlGaN channel with Al-composition grading from 65 to 82%. Transistors with a gate length of 0.8 μm were fabricated, with a current density of 265 mA/mm, the highest observed ...
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关键词
current density,aluminium compounds,wide band gap semiconductors,gallium compounds,III-V semiconductors,microwave field effect transistors
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