Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

A novel early gate dielectric AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) process is reported. With the highquality Si3N4 dielectric by low-pressure chemical vapor deposition and damage free, self-terminating passivation layer etching at the gate area, the MIS-HEMTs on 150-mm Si substrate demonstrate excellent output performance and good uniformity. The i...