Si Content Variation And Influence Of Deposition Atmosphere In Homoepitaxial Si-Doped Beta-Ga2o3 Films By Pulsed Laser Deposition
APL MATERIALS(2018)
摘要
Carrier concentration control by impurity dopants in epitaxial Ga2O3 thin films is progressing to deliver high mobility films for device structures. Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on (010) beta-Ga2O3 substrates from Ga2O3 targets with 0.01-1 wt.% SiO2 yielding films with an electron mobility range consistent with other vapor growth techniques. Single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction was observed, with a high Si dopant level causing film tensile strain as indicated by both techniques. The influence of oxygen on conductivity using different O-2 pressures during deposition and O-2/Ar mixtures with a fixed working pressure of 1.33 Pa was determined. With this optimized deposition pressure and atmosphere condition, a carrier concentration and mobility range of 3.25 x 10(19) cm(-3) -1.75 x 10(20) cm(-3) and 20 cm(2)/V s-27 cm(2)/V s was achieved in films from Ga2O3-0.025 wt.% SiO2 and Ga2O3-1 wt.% SiO2 targets, respectively. A highest conductivity of 798 S cm(-1) was achieved in films deposited at 550 degrees C-590 degrees C with targets of 0.05-1 wt.% SiO2. The electrically active and chemical Si content in films deposited at 550 degrees C was found to exceed the expected Si ablation target composition in all cases except the highest 1 wt.% SiO2 target attributed to imprecise target manufacturer compositional control at low SiO2 doping levels. Diminished electrical and structural quality films resulted from all targets at a 450 degrees C deposition temperature. (C) 2018 Author(s).
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