Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se 2 Solar Cells

IEEE Journal of Photovoltaics(2019)

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摘要
We report on measurements of junction location in Cu(In,Ga)Se2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absor...
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关键词
Junctions,Electric potential,Probes,Zinc oxide,II-VI semiconductor materials,Photovoltaic cells
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