Incorporation Of A Curved Mirror Into Gan-Based Vcsel

2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)(2018)

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摘要
The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.
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关键词
atomically smooth curved mirror,GaN-based VCSEL,cavity structure,GaN-based vertical-cavity surface-emitting lasers,dielectric distributed Bragg reflectors,device characteristics,GaN
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