Complementary Logic Implementation for Antiferromagnet Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits（2018）

引用 8|浏览18

暂无评分

摘要

In this paper, a compact and complementary logic implementation is proposed for antiferromagnet field-effect transistor (AFMFET) devices. The implementation enables a complete set of Boolean operations based on complementary logic as well as majority-gate logic. The impacts of several key device-level design parameters are investigated, such as the channel resistance and critical switching voltage...

查看译文

关键词

Logic gates,Performance analysis,Magnetic domains,Magnetic tunneling,Field effect transistors,Magnetic devices

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要