A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

Wei-Chih Chien,Chiao-Wen Yeh,Robert L. Bruce,Huai-Yu Cheng,I. T. Kuo,Chih-Hsiang Yang,A. Ray,Hiroyuki Miyazoe,W. Kim,Fabio Carta,Erh-Kun Lai,Matthew J. BrightSky,Hsiang-Lan Lung

IEEE Transactions on Electron Devices（2018）

引用 33|浏览87

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摘要

High endurance ovonic threshold switch (OTS, here, TeAsGeSiSe-based) is integrated with phase change memory (PCM, here, doped Ge2Sb2Te5) to form a 3-D stackable pillar-type device. With the help of an etch buffer layer and a damage-free pillar reactive-ion etching process, we successfully demonstrate one-selector (OTS)/one-resistor (PCM) (1S1R OTS-PCM) pillar device without OTS/PCM composition mod...

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关键词

Phase change materials,Video recording,Buffer layers,Threshold voltage,Switches,Etching,Electrodes

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