A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

Chiao-Wen Yeh
Chiao-Wen Yeh
Robert L. Bruce
Robert L. Bruce
I. T. Kuo
I. T. Kuo
Chih-Hsiang Yang
Chih-Hsiang Yang
Fabio Carta
Fabio Carta

IEEE Transactions on Electron Devices, pp. 5172-5179, 2018.

Cited by: 0|Bibtex|Views28|DOI:https://doi.org/10.1109/TED.2018.2871197
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Abstract:

High endurance ovonic threshold switch (OTS, here, TeAsGeSiSe-based) is integrated with phase change memory (PCM, here, doped Ge2Sb2Te5) to form a 3-D stackable pillar-type device. With the help of an etch buffer layer and a damage-free pillar reactive-ion etching process, we successfully demonstrate one-selector (OTS)/one-resistor (PCM) ...More

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