The Performance of Operational Amplifiers Consisting of 4H-SiC CMOS After Gamma Irradiation

The operational amplifier was fabricated by 4H-SiC complementary MOS on the same die for sensors installed in nuclear power plants, and it showed over 100× the radiation resistance compared with Si bipolar junction transistors. The closed-loop gain at 50 kGy was 11% lower than it of preirradiation because the allowable output voltage range became small by the threshold voltage degradation of p-cha...