Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
IEEE Electron Device Letters, pp. 75-78, 2019.
This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mQ · cm2 and a threshold voltage of 1.3 V. Device j...More
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