Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Josh Perozek
Josh Perozek
Nadim Chowdhury
Nadim Chowdhury
Xiang Gao
Xiang Gao

IEEE Electron Device Letters, pp. 75-78, 2019.

Cited by: 0|Bibtex|Views15|DOI:https://doi.org/10.1109/LED.2018.2880306
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Abstract:

This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mQ · cm2 and a threshold voltage of 1.3 V. Device j...More

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