Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage

Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhibit undesired reversals of memory bits, called single-event upsets or soft errors. Sensitivity to such undesired events is widely quantified with the parameter of cross sections, which varies from cell to cell due to process variations. Many efforts have been made to quantify such variations, most c...