Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V
Journal of Crystal Growth(2019)
摘要
•Design criteria of high growth rate MOVPE reactor are described.•GaAs solar cell was grown by MOVPE with a growth rate of 90 µm/h.•The cell efficiency of 23.59%, Voc of 1.003 V, Jsc of 29.36 and FF of 0.81.•Si doped GaN was grown on 4 in. sapphire substrate by production MOVPE.•E3 trap density was about 1 × 1014 cm−3 at a donor concentration of 1.0 × 1016 cm−3.
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关键词
B3. Devices semiconducting gallium arsenide,B3. Devices gallium nitride,B1. Materials by type,Semiconductors
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