Mocvd Deposition Of Group V Doped Cdte In Sublimated Cdte And Cdsete Devices

Increasing doping density in CdTe absorbers remains one of the most promising avenues for increasing the open-circuit voltage (V-OC) of photovoltaic devices. This work aimed to develop methods for quickly incorporating group V as a p-type dopant using Metal-Organic Chemical Vapor Deposition (MOCVD) precursor injection. CdTe: N was deposited by MOCVD injection during sublimation of CdTe. CdTe: As was deposited via MOVCD onto an existing sublimated CdSeTe layer to produce doped CdSeTe/CdTe devices. Nitrogen doping resulted in increased external quantum efficiency and an improved diode curve as compared to a device exposed to cadmium overpressure without the presence of MOVCD nitrogen.