Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

world conference on photovoltaic energy conversion, 2018.

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In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same loca...More



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