Growth and Composition of Atomic Layer Deposited Titanium Oxide Films for c-Si Solar Cell Applications
world conference on photovoltaic energy conversion, 2018.
In this work, a detailed study on the growth and composition of atomic layer deposited (ALD) titanium oxide (TiO x ) films on crystalline silicon (c-Si) substrates is presented. The effects of deposition temperature from 100 to 400 °C and post-deposition annealing on the properties of TiOx films are examined. The ALD growth process and th...更多
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