24.5% efficient GaAs p-on-n solar cells with 120 µm h−1 MOVPE growth

By enhancing the transport of gas precursors though the chemical boundary layer using a narrow-channel reactor, the growth rate (GR) of GaAs by metal-organic vapor-phase epitaxy has been increased to 120 mu m h(-1) without saturation with an increase in TMGa supply. The minority hole lifetime in n-GaAs was clearly shortened with an increase in GR from 20 to 120 mu m h(-1). Consequently, the short-circuit current density as well as conversion efficiency slightly decreased with an increase in GR. Nevertheless, a conversion efficiency of 24.48% could be realized for a GaAs cell with the n-type base layer grown at 120 mu m h(-1).