Studies on ReRAM Conduction Mechanism and the Varying-bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM
ieee international conference on solid state and integrated circuit technology, 2018.
The resistance of transition metal oxide (TMO) ReRAM is a strong function of temperature which resulting in the variation of the memory window and limiting the applications in wide-temperature range or multi-level data storage. This paper investigates the device conduction mechanism and suggests a model to correlate the cell resistance wi...更多
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