Studies on ReRAM Conduction Mechanism and the Varying-bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM

ieee international conference on solid state and integrated circuit technology, 2018.

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摘要

The resistance of transition metal oxide (TMO) ReRAM is a strong function of temperature which resulting in the variation of the memory window and limiting the applications in wide-temperature range or multi-level data storage. This paper investigates the device conduction mechanism and suggests a model to correlate the cell resistance wi...更多

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