Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates

•h-BN were grown on sub-micron size dome patterned sapphire substrates.•Wrinkled morphology of layered h-BN was obtained on c-plane sapphire.•On the domes, h-BN were different demonstrating anisotropy.•TEM confirmed h-BN is layered and continuous with turbostratic islands on domes.•320 nm peak intensity increase confirms the TEM observations.