Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam

Focused, pulsed X-rays are used to generate single-event transients (SETs) in metal-insulator-semiconductor (MIS)-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in order to investigate the mechanisms responsible for SETs. Unlike Schottky-gate GaN HEMTs, where current flows between gate and drain when the device is biased “OFF,” for the MIS-gate HEMTs, current flows between the source an...