Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits

Kai Matsuura,Yuta Tanimoto,Atsushi Saito,Yosuke Miyaoku,Takeshi Mizoguchi,Mitiko Miura-Mattausch,Hans Jürgen Mattausch

Solid-State Electronics（2019）

引用 8|浏览8

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摘要

•Strong measured temperature-dependent switching of 4H-SiC IGBT verified.•Mayor reason is temperature-dependent carrier trapping in MOSFET part of IGBT.•Carrier trapping modeled as threshold-voltage shift and oxide-charge modification.•Switching tail is increased by temperature-dependent carrier lifetime in IGBT base.•New compact model accurately reproduces temperature-dependent SiC IGBT switching.

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关键词

SiC-IGBT,Compact model,Temperature dependence,Switching performance,Carrier traps

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