Voltage-Induced Charge Redistribution in Cu(In,Ga)Se 2 Devices Studied With High-Speed Capacitance–Voltage Profiling

Jeff Bailey,Dmitry Poplavskyy,Geordie Zapalac,Lorelle M. Mansfield,William Shafarman

IEEE Journal of Photovoltaics（2019）

引用 3|浏览54

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摘要

Devices made from Cu(In,Ga)Se2 (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicat...

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关键词

Voltage measurement,Capacitance,Capacitance measurement,Doping,Semiconductor device measurement,Temperature measurement,Transient analysis

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