Comparison of structural and optical properties of blue emitting In 0.15 Ga 0.85 N/GaN multi-quantum-well layers grown on sapphire and silicon substrates

Richard Liu
Richard Liu
Callan McCormick
Callan McCormick

AIP ADVANCES, pp. 0253062019.

被引用0|引用|浏览1|DOI:https://doi.org/10.1063/1.5078743
其它链接academic.microsoft.com

摘要

Six periods of 2-nm-thick In0.15Ga0.85N/13-nm-thick GaN blue emitting multi-quantum-well (MQW) layers are grown on sapphire (Al2O3) and silicon (Si) substrates. X-ray diffraction, Raman spectroscopy, atomic force microscopy, temperature-dependent photoluminescence (PL), Micro-PL, and time-resolved PL are used to compare the structural and...更多

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