Single-Crystal-Ga2o3/Polycrystalline-Sic Bonded Substrate With Low Thermal And Electrical Resistances At The Heterointerface

A single-crystal beta-Ga2O3 substrate was directly attached to a polycrystalline SiC (poly-SiC) substrate using a surface-activated-bonding method to enhance heat extraction from beta-Ga2O3 devices. The effective thermal conductivity of the n(+)-Ga2O3/n(+)-poly-SiC bonded substrate and the electrical resistance at the heterointerface were characterized by using periodic heating radiation thermometry and analyzing vertical current-voltage characteristics, respectively. Small thermal and electrical resistances at the bonded interface demonstrated the strong prospects of the bonded substrates for applications to high-power vertical Ga2O3 devices. Published under license by AIP Publishing.