Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level
Sensors and Actuators B: Chemical(2019)
摘要
•Ga2O3-WO3 p-n heterostructures were developed by two-step ALD process.•The thickness of Ga2O3-WO3 heterostructures was ˜8.0 nm.•The gas sensing properties of Ga2O3-WO3 heterostructures were enhanced compared with WO3 and Ga2O3 nanofilms.•The detection limit for ethanol can be as low as 1.0 ppm for Ga2O3-WO3 heterostructures.
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关键词
Ga2O3-WO3,Heterostructures,Atomic layer deposition,Chemical sensors
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