High Speed (F(3-Db) Above 10 Ghz) Photo Detection At Two-Micron-Wavelength Realized By Gesn/Ge Multiple-Quantum-Well Photodiode On A 300 Mm Si Substrate
international electron devices meeting(2018)
摘要
High speed photo detection at two-micronwavelength has been achieved with a GeSn/Ge multiplequantum-well (MQW) photodiode (PD), demonstrating a 3 -dB bandwidth (f(3)(-dB)) above 10 GHz for the first time. The device layer stack was grown on a standard 300 mm (001) Si substrate using RPCVD, showing potential for large-scale integration. Radio frequency (RF) characterization was performed using 2-mu m RF optical measurement setup. To our knowledge, this is also the first PDs on Si with direct RF measurement to quantitatively confirm the high speed functionality at 2 mu m.
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