Three Dimensional Integration Of Rerams

2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)(2018)

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摘要
Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data.3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory. In this talk we review current state-of-the-art works which offer promising solutions, utilizing either filamentary or non-filamentary ReRAM designs, including our own. We will discuss the pros and cons of different approaches and summarize the open problems, drawing possible solutions.
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关键词
nonfilamentary ReRAM designs,filamentary ReRAM designs,memory-driven computing,three dimensional integration,3D vertical resistive random access memory,on-chip processing,storage-class memory
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