Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography
PHYSICAL REVIEW APPLIED(2019)
摘要
We investigate the local structures of a GaN substrate through an energy-resolved white x-ray diffraction topography method. A section topography geometry is implemented at various sample positions for the purpose of wafer mapping. The obtained images at each position are piled up for the three-dimensional matrix and then sliced at a same energy position. The sliced images of the lower and higher diffraction energy show periodic bottomless and topless features originated from the local lattice tilting, respectively. It is revealed that the local lattice planes are tilted by +/- 0.03 degrees around points in the periodic structures. This tilting angle is consistent with results obtained from monochromatic x-ray diffraction topography measurements. X-ray rocking curves obtained by a single-crystal x-ray diffraction shows the tilting of local structure that is also consistent with the energy-resolved x-ray diffraction topography results.
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