Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs

Xueqing Li,Juejian Wu,Kai Ni,Sumitha George,Kaisheng Ma,John Sampson,Sumeet Gupta,Yongpan Liu,Huazhong Yang,Suman Datta,Vijaykrishnan Narayanan

IEEE Design & Test of Computers（2019）

引用 28|浏览82

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摘要

Editor’s note: This article explores the design of high-density, low-power, and high-speed embedded nonvolatile memory arrays exploiting the unique device characteristics of the emerging ferroelectric FETs. — Vivek De, Intel Corporation

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关键词

Nonvolatile memory,Logic gates,Sensors,Switches,Phase change random access memory,MOSFET,Hysteresis

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