Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)

JAPANESE JOURNAL OF APPLIED PHYSICS, 2019.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.7567/1347-4065/ab002b
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Abstract:

This paper demonstrates a modulation-doped fisseld-effect transistor (MODFET) and a metal-semiconductor field-effect transistor (MESFET) using beta-(AlGa)(2)O-3 (010). Ohmic contacts on Sn-doped (Al0.15Ga0.85)(2)O-3 exhibit a fairly linear behavior, which has a specific contact resistivity and sheet resistance of 9 x 10(-5) Omega cm(2) an...More

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