An Accurate And Simplified Small Signal Parameter Extraction Method For Gan Hemt
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS(2019)
摘要
In this paper, development of a small signal model for 2 x 200 mu m GaN HEMT based on the conventional 20-element model is presented. The proposed model presents a direct parameter extraction algorithm, instead of the hybrid optimization approach, that provides simplification, accuracy, and less computational complexity. The extrinsic elements are extracted using a modified cold pinch-off condition while discarding the unwanted forward biasing of the gate. The negative drain to source capacitance C-ds is also observed in the ohmic region (for smaller V-DS). An excellent agreement found between the measured and modeled data for a wide range of frequencies and bias values shows the effectiveness of the proposed approach. The proposed modeling technique is validated with a good agreement between the achieved bias dependency of intrinsic parameter values and the respective theoretical parameter values.
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关键词
2DEG, AlGaN, GaN HEMT, cold pinch-off, de-embedding, parameter extraction
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