Point contact bipolar resistive switching observed in transparent ZnMgO/ZnO:Ga heterostructure

Transparent ZnMgO/ZnO:Ga/c-sapphire hetero-structures with an optical transmittance of 73% in the visible region were fabricated by pulsed laser deposition technique. Bipolar resistive switching is observed in this structure with a simple contact approach, (i.e. across a W pin on top of the ZnMgO surface and another connected to the ZnO:Ga which acts as the transparent electrode). Conduction mechanisms for low resistance state (LRS) was explained by Ohmic behavior, but for high resistance state (HRS) Schottky emission model was used to explain for the conduction behavior. Moreover, the memory effect, good retention and endurance characteristics of the fabricated ZnMgO/GaZnO/c-sapphire device suggest its prospective application for the transparent resistive random-access memory devices.