Sputtering Yields of Tantalum by Hydrogen Ions in the Energy Range of 3–11 Kev

The total sputtering yield of 6nm thick polycrystalline tantalum films resulting from H-2(+) ion bombardment, at normal incidence, has been determined. For this purpose, we study the evolution of the energy loss of protons transmitted through very thin films of tantalum following bombardment with controlled doses of H-2(+). The energy of the incident ions ranges from 3 to 11 keV. Our method allows us to determine how to find the limit of the thin film surface contamination which is important for stopping power measurements of pure samples. It also allows to prepare films of predetermined variable thickness.