Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

IEEE Photonics Journal(2019)

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摘要
Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway toward the monolithic integration of new, mid-infrared solid-state light source...
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关键词
Silicon,Light emitting diodes,Substrates,Temperature measurement,Photonics,Lattices,Strain
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